PART |
Description |
Maker |
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
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IRF[International Rectifier]
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IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
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IRF[International Rectifier]
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IRFG110 JANTX2N7334 JANTX2N7334N JANTXV2N7334 JANT |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | DIP POWER MOSFET THRU-HOLE (MO-036AB) 100V Quad N-Channel MOSFET in a MO-036AB package 100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
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International Rectifier
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FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
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Cooper Bussmann, Inc.
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FDP120N10 |
74 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel PowerTrench垄莽 MOSFET 100V, 74A, 12m楼? N-Channel PowerTrench? MOSFET 100V, 74A, 12mΩ
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FAIRCHILD SEMICONDUCTOR CORP
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HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
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Fairchild Semiconductor Corporation
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FDS3992 |
N-Channel PowerTrench MOSFET 100V, 4.5A, 62mз 4.5 A, 100 V, 0.062 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET N-Channel PowerTrench MOSFET 100V/ 4.5A/ 62m
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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FQT7N10L FQT7N10LTF FQT7N10LL99Z |
100V N-Channel Logic Level QFET 100V LOGIC N-Channel MOSFET 1.7 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
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FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp.
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IRHY597130CM IRHY593130CM |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12.5A I(D) | TO-257AA
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IRF[International Rectifier]
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JANTXV2N7335 JANTX2N7335 IRFG9110 IRFG9110P IRFG91 |
Simple Drive Requirements POWER MOSFET THRU-HOLE (MO-036AB) 100V Quad P-Channel MOSFET in a MO-036AB package -100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
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IRF[International Rectifier]
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IRF5N5210 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-2 package POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.060ohm, Id=-31A) POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.060ohm/ Id=-31A)
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International Rectifier
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